http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201110341-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7e0e42cba4bee6c48312821708b5d3a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
filingDate | 2009-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e9eac3a4301cc683556a13081393af3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_804c269b6d68255ea6a763131c71b3b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_199f08ab628dfe115659fde81f7058f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bac84cbc6357f97d1fc2db9f11cf403b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b409d634bb1a8604d9e5fe1c088ae78 |
publicationDate | 2011-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201110341-A |
titleOfInvention | Memory device with organic thin-film transistor (OTFT) structure |
abstract | The present invention disclosed a memory device with organic thin-film transistor (OTFT) structure, which comprises a substrate, a gate electrode, multiple organic dielectric layers, a semiconductor channel layer, a drain electrode and a source electrode. Wherein, the gate electrode is formed on the substrate, the multiple dielectric layers is formed on the gate electrode, the channel layer, the drain electrode and the source electrode are all formed on dielectric layers; meanwhile, the drain and source electrodes are electrically contacted with the channel layer. The multiple dielectric layers compose of the polymer with hydroxyl groups to trap carriers for the memory effect and to open the channel, and polymers those can reduce leakage current. |
priorityDate | 2009-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.