http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201110341-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
filingDate 2009-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e9eac3a4301cc683556a13081393af3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_804c269b6d68255ea6a763131c71b3b7
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publicationDate 2011-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201110341-A
titleOfInvention Memory device with organic thin-film transistor (OTFT) structure
abstract The present invention disclosed a memory device with organic thin-film transistor (OTFT) structure, which comprises a substrate, a gate electrode, multiple organic dielectric layers, a semiconductor channel layer, a drain electrode and a source electrode. Wherein, the gate electrode is formed on the substrate, the multiple dielectric layers is formed on the gate electrode, the channel layer, the drain electrode and the source electrode are all formed on dielectric layers; meanwhile, the drain and source electrodes are electrically contacted with the channel layer. The multiple dielectric layers compose of the polymer with hydroxyl groups to trap carriers for the memory effect and to open the channel, and polymers those can reduce leakage current.
priorityDate 2009-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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