http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201109488-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2010-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8547b5de250b0505a4158fc1b9523776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d |
| publicationDate | 2011-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201109488-A |
| titleOfInvention | Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same |
| abstract | Disclosed is a group-III nitride crystal substrate (1) characterized in that a surface layer of the crystal substrate has a uniform deformation of 1.9 10-3 or less, the uniform deformation being expressed by a value of |d1 - d2|/d2 obtained from an interplanar spacing d1 when the penetration depth of X-rays is 0.3 [mu]m and an interplanar spacing d2 when the penetration depth of X-rays is 5 [mu]m, the interplanar spacings being those of specific parallel lattice planes obtained by X-ray diffraction measurement in which the penetration depth of X-rays from the main surface (1s) of the crystal substrate is changed while X-ray diffraction conditions for any specific parallel lattice planes of the group-III nitride crystal substrate are satisfied; and that the orientation of plane of the main surface (1s) is inclined from the (0001) plane or the (000-1) plane (1c) of the crystal substrate in the <10-10> direction in the range from 10 DEG to 80 DEG . This can provide a group-III nitride crystal substrate, a group-III nitride crystal substrate with an epitaxial layer, a semiconductor device, and methods for manufacturing the same suitable for producing light emitting devices of which light is prevented from blue shifting. |
| priorityDate | 2009-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.