| abstract |
Disclosed is a method of depositing a chemical compound semiconductor, in which the light emission wavelength thereof can be adjusted to nanometer order, when a chemical compound semiconductor comprising three or more elements is deposited on a substrate. A method of deposition of a chemical compound semiconductor comprising three or more elements deposited on a substrate, wherein, while depositing the chemical compound semiconductor on a substrate (13), propagating light of lower energy than the required ideal excitation energy of this chemical compound semiconductor is directed onto this substrate (13). Near-field light is thereby generated from the propagating light that is directed onto the substrate (13), from micro-grains of the chemical compound semiconductor that is deposited thereon. New oscillation levels over multiple stages are thereby formed in respect of the chemical compound semiconductor, based on the near-field light that is thus generated. By way of an oscillation level, from these new oscillation levels, having an excitation energy that is no more than the energy possessed by the propagating light, a constituent in the chemical compound semiconductor corresponding to this oscillation energy is excited by the propagating light, and this constituent is thereby removed. |