http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201104837-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_049edf31debe0e493cfee45b220d1590 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6574ce55edd1b6dd61c40408b272c9ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe8e126ab5b02262f3201bd34cdc0d55 |
| publicationDate | 2011-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201104837-A |
| titleOfInvention | Semiconductor device and the manufacturing method thereof |
| abstract | The present invention is aimed at improving the performance of complementary metal insulator semiconductor field effect transistor (CMISFET) containing high dielectric coefficient gate insulation films and metal gate electrodes. N-channel type MISFET (Qn) includes gate electrode (GE1) that is formed by letting Hf-containing insulation film (3a), which plays a key role in the gate insulation film, deposit on the surface of p-type well (PW) of the semiconductor substrate (1). P-channel type MISFET (Qn) includes gate electrode (GE2) that is formed by letting Hf-containing insulation film (3b), which plays a key role in the gate insulation film, deposit on the surface of n-type well (NW). The gate electrodes (GE1, GE2) have laminated structure which is made of metal film (7) and the silicon film (8) thereon. The Hf-containing insulation film (3a) is the insulating material film that contains Hf, rare earth elements, and Si, O, and N elements, or the insulating material film that contains Hf, rare earth elements, and Si, and O elements. The Hf-containing insulation film (3b) is the insulating material film that contains Hf, Al, O and N elements, or the insulating material film that contains Hf, Al, and O elements. |
| priorityDate | 2009-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.