http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201101536-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
filingDate | 2010-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95a1466481d01187ef70798889e5291b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72f8db0cb05c5f0ee127d1b7f2c08412 |
publicationDate | 2011-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201101536-A |
titleOfInvention | Light-emitting element and method of making the same |
abstract | A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4). |
priorityDate | 2009-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.