http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201042757-A

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publicationDate 2010-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201042757-A
titleOfInvention Image sensor device and method of fabricating the same
abstract A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
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