Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate |
2010-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7496242881e13f27080818641bfc9a75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f96bcc19ebf08b05657b5d765fd48ced http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f307662c9bf9c44de9aba76ea24a9910 |
publicationDate |
2010-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201041087-A |
titleOfInvention |
Semiconductor device and method of manufacturing the same |
abstract |
To provide a semiconductor device provided with an element isolation structure capable of hindering an adverse effect on electric characteristics of a semiconductor element, and a method of manufacturing the same. The thickness of a first silicon oxide film left in a shallow trench isolation having a relatively narrow width is thinner than the first silicon oxide film left in a shallow trench isolation having a relatively wide width. A second silicon oxide film (an upper layer) having a relatively high compressive stress by an HDP-CVD method is more thickly laminated over the first silicon oxide film in a lower layer by a thinned thickness of the first silicon oxide film. The compressive stress of an element isolation oxide film finally formed in a shallow trench isolation having a relatively narrow width is more enhanced. |
priorityDate |
2009-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |