| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32871 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425 |
| filingDate |
2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d00508927b2b4c71dea8efef775b4cc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9921173c93fa49a81486f0d6c9aebc8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5669764427029858b7ced9e1c54e5dd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_939b6c50be5565b85a70b77cc616f5e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe67ce2bc0ab95a799200f999b0a07af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73e0df3866a4e1e418202d22b111fd8b |
| publicationDate |
2010-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201041052-A |
| titleOfInvention |
Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
| abstract |
Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I784577-B |
| priorityDate |
2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |