| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2010-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b230d86c69f120f8d128ebbdf2c7730 |
| publicationDate |
2010-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201041037-A |
| titleOfInvention |
Method for forming a high-k gate stack with reduced effective oxide thickness |
| abstract |
A method is provided for forming a high-k gate stack with a reduced effective oxide thickness (EOT) for a semiconductor device. The method includes providing a silicon-containing substrate, forming an interface layer on the silicon-containing substrate, where the interface layer has a first equivalent oxide thickness, depositing a first high-k film on the interface layer, and heat-treating the first high-k film and the interface layer at a temperature that forms a modified interface layer, where the modified interface layer has a second equivalent oxide thickness that is equal to or lower than the first equivalent oxide thickness. The method further includes depositing a second high-k film on the modified interface layer. According to one embodiment, the first high-k film includes lanthanum oxide and the second high-k film includes hafnium silicate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636824-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I560774-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10720460-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I624906-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10177185-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I508189-B |
| priorityDate |
2009-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |