| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2010-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0709cd6763214baa0ac11f7a7b9dd937
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5175bb9ece1baccaee69bcb9204b2d25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9204d3887d35808410fdff5edf565d7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80bff9b0f4a1bbf9b8fad67260fbfc30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0459559e048d78c0cee19a9e9914e78 |
| publicationDate |
2010-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201036215-A |
| titleOfInvention |
Light emitting element producing method and light emitting element |
| abstract |
Disclosed is a light emitting element producing method wherein a light emitting element for a group-III to V compound semiconductor having a quantum well structure containing In and N is produced. The light emitting element producing method is comprised of a step of forming a well layer (13a) containing In and N; a step of forming a barrier layer (13b), the band gap of which is wider than that of the well layer (13a); and a step of interrupting an epitaxial growth by supplying gas containing N between the step of forming the well layer (13a) and the step of forming the barrier layer (13b). In the interrupting step, gas having a degradation efficiency higher than the degradation efficiency obtained when N2 and NH3 are degraded to active nitrogen at 900 DEG C is supplied. Further, in the interrupting step, gas different from a supply source which supplies N of the well layer (13a) is supplied. |
| priorityDate |
2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |