http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201036066-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c4ea8733ef97034d09e57f4e7526eac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42ed5423bfa1c6806bd782be5956c711 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5dc27d354509fc3ccda536ca269a563 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5711efff92c7baffcbfff8758f9d9174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c941886b9985239ea27c05048283a01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37b5c541187dde9a8934dcf65af99b31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df3f7d17803875152ce46f5e3b4251a |
| publicationDate | 2010-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201036066-A |
| titleOfInvention | Method for manufacturing silicon thin-film transfer insulating wafer |
| abstract | To provide a method for manufacturing an SOI wafer capable of preventing the occurrence of thermal distortion, peeling, cracking, etc., resulting from a difference in the coefficient of thermal expansion between an insulating substrate and an SOI layer and improving the evenness of film thickness of the SOI layer. The method includes the steps of performing surface activation treatment on both or either of a hydrogen ion injection surface of a single crystal silicon wafer provided with a hydrogen ion injection layer and a surface of an insulating wafer, bonding the hydrogen ion injection surface and the surface to obtain a bonded wafer, thermally treating the bonded wafer at a first temperature, grinding and/or etching the surface on the side of the single crystal silicon wafer of the bonded wafer to reduce the thickness of the single crystal silicon wafer of the bonded wafer, thermally treating the bonded wafer at a second temperature higher than the first temperature, and peeling the hydrogen ion injection layer by applying a mechanical impact on the hydrogen ion injection layer of the bonded wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I475609-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I588914-B |
| priorityDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.