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publicationDate 2010-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201036038-A
titleOfInvention Method of manufacturing semiconductor device and substrate processing apparatus
abstract The semiconductor device manufacturing method of the invention comprises a carrying-in step of carrying a substrate into a processing chamber; a first film-forming step of providing the processing chamber with gas containing silicon atoms, gas containing boron atoms, and gas containing germanium atoms to form a first film on the substrate; a second film-forming step of providing the processing chamber with gas containing silicon atoms and gas containing boron atoms to form a second film on the first film; and a moving-out step of moving the substrate out of the aforementioned processing chamber.
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