| abstract |
The objective of this invention is to provided a layer having excellent coverage and film forming uniformity as a very thin film, to provide a pre-processing technique for forming a superfine wiring and filming a seed layer of thin and uniform thickness, and to provide a substrate with a seed layer formed at thin and uniform thickness through electroless plating by using the pre-processing technique. The substrate of the present invention is characterized in that an alloy film is formed on the substrate by chemical vapor deposition (CVD), composed of at least one of metal element having barrier-function selected from tungsten, molybdenum, and niobium, and a metal element having catalytic energy for electroless plating, namely ruthenium and/or platinum, wherein the metal element having barrier function in the alloy composition is greater than 5 atom % and less than 90 atom%, and the film thus fabricated is of a thickness between 0.5 nm and 5 nm. |