| abstract |
A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100 DEG C per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about -70 DEG C per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100 DEG C or more. |