| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37b416a8c0d2b0f1c3d6026d932027af |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f29716282a1b329a58e93e6cd3699ab6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e6c05a0e5057cb1aaa9d7792a252c10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70f3b7c7b1bb0cf84924fd0e1755a88d |
| publicationDate |
2010-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201030837-A |
| titleOfInvention |
Method of at least partially releasing an epitaxial layer |
| abstract |
A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103843161-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103843161-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I499086-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647174-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I761662-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I452621-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I452691-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I459592-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343615-B2 |
| priorityDate |
2008-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |