| abstract |
Chemical mechanical polishing (CMP) slurry of the invention includes abrasives, additive, and water. An organic compound satisfying a determined condition is concocted as the additive. A polishing method of the invention utilities a substrate as the target and a surface of the substrate has a silicon oxide film. The polishing method includes the following steps: supplying the CMP slurry between the silicon oxide film and a polishing pad, and polishing the silicon oxide film by the polishing pad at the same time. |