http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201029069-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_077181d03fda9430706529220c26c019 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c9662d820cf28d272d9bb751f8b0014 |
| publicationDate | 2010-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201029069-A |
| titleOfInvention | Method of using evaporating and laser annealing to construct a semiconductor structure in display panel and thin film solar panel manufacturing process |
| abstract | This invention provides a method of using evaporating and laser annealing to construct a semiconductor structure in display panel and thin film solar panel manufacturing process. This method completes the construction of a semiconductor structure by using a twin-electron gun evaporation to construct the corresponding N+ semiconductor layer, quantum well semiconductor, and P-semiconductor layer. Moreover, a laser annealing method is utilized to sequentially scan the aforementioned semiconductor structure with a high temperature laser beam and cause evaporation to take place, so as to make an amorphous semiconductor structure to crystallize and become multi-crystalline shape. This invention can reduce manufacturing cost and also increase production dimension and enhance product performance. |
| priorityDate | 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.