| abstract |
A method for manufacturing a semiconductor light-emitting element, which comprises a semiconductor layer forming step, a bonding step, a groove forming step, a light irradiation step, a separation step and a cutting step. In the semiconductor layer forming step, a nitride semiconductor laminate layer is formed on the upper surface of a light-transmitting first wafer. In the bonding step, a second wafer is bonded to the upper surface of the nitride semiconductor laminate layer. In the groove forming step, a groove having a depth reaching from the lower surface of the first wafer to the nitride semiconductor laminate layer is formed. In the light irradiation step, the lower surface of the nitride semiconductor laminate layer is irradiated with first light through the first wafer, thereby lowering the bonding force between the nitride semiconductor laminate layer and the first wafer. In the separation step, the first wafer is separated from the nitride semiconductor laminate layer. In the cutting step, the second wafer is cut along the groove, thereby being divided into a plurality of semiconductor light-emitting elements |