http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201027703-A

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publicationDate 2010-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201027703-A
titleOfInvention Semiconductor device and methods for froming the same
abstract A semiconductor device is provided, having one or more through-silicon vias (TSVs). The TSVs are formed such that sidewalls of the TSVs have a scalloped surface. In an embodiment, the sidewalls of the TSVs are sloped wherein a top and bottom of the TSVs have different dimensions. The TSVs may have a V-shape wherein the TSVs have a wider dimension on a circuit side of the substrate, or an inverted V-shape wherein the TSVs have a wider dimension on a backside of the substrate. The scalloped surfaces of the sidewalls and/or sloped sidewalls allow the TSVs to be more easily filled with a conductive material such as copper.
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