http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201027629-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0d6e14b17acabd4bedfd3b63a56891 |
| publicationDate | 2010-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201027629-A |
| titleOfInvention | Method for fabricating a semiconductor device |
| abstract | A method for fabricating a semiconductor device includes providing a substrate sequentially having a polysilicon layer and an insulating layer formed thereon; patterning the polysilicon layer and the insulating layer to form at least a gate structure on the substrate; forming lightly doped regions in the substrate respectively at two side of the gate structure; forming a spacer on a sidewall of the gate structure; forming barrier layers respectively on a top surface of the gate structure and surfaces of the substrate at two sides of the spacer, and forming a source/drain in the substrate respectively at two sides of the spacer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111128885-A |
| priorityDate | 2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.