http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201026911-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02
filingDate 2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc14f7c726260a2109d5a75cb3474b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c6f4b5bca8b47a5fb22b0c5942a523
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publicationDate 2010-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201026911-A
titleOfInvention Bottom up plating by organic surface passivation and differential plating retardation
abstract Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.
priorityDate 2008-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.