http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201025692-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-655 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-482 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c9aa22c60e3f207562e1a70d54f8efa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_079b24d16097a7f5a0068709858bc637 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd29d6463ec9c83ec64d68701e75f6ee |
| publicationDate | 2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201025692-A |
| titleOfInvention | Dual gate field-effect transistor and method of producing a dual gate field-effect transistor |
| abstract | The present invention relates to a dual gate field-effect transistor (1) comprising a first and a second dielectric layer (6, 7), a first and a second gate electrode (9, 11) and an assembly (2) of at least one source electrode (3), at least one drain electrode (4) and at least one organic semiconductor (5), wherein the source electrode (3) and the drain electrode (4) are in contact with the semiconductor (5), the assembly (2) is located between the first dielectric layer (6) and the second dielectric layer (7), the first dielectric layer (6) is located between the first gate electrode (9) and a first side (8) of the assembly (2), and the second dielectric layer (7) is located between the second gate electrode (11) and a second side (10) of the assembly (2), wherein the organic semiconductor (5) is an organic ambipolar conduction semiconductor (12) which enables at least one electron injection area (18) at the first side (8) and at least one hole injection area (18) at the second side (19) of the assembly (2). The present invention further comprises a corresponding light emission device, a corresponding sensor system and a corresponding memory device comprising at least one field-effect transistor and a method of producing a corresponding dual gate field-effect transistor. |
| priorityDate | 2008-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.