| abstract |
A semiconductor device includes a logic device and a LDMOS device. The logic device including a first well of a first conductive type formed in the first substrate, a first source region and a first drain region formed in the first well, and a first gate electrode formed over the first well. The LDMOS device including a deep well of the first conductive type formed in a second substrate, a body region of a second conductive type and a second well of a first conductive type formed in the deep well, a second source region formed in the body region, a second drain region formed in the second well, a second gate electrode formed over the second substrate, and an impurity layer of the first conductive type formed in the second substrate under the second gate electrode. |