http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201025589-A

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filingDate 2008-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eec8e70f9c75755675a09ed534355c40
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publicationDate 2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201025589-A
titleOfInvention Conductive bridging random access memory device and method of manufacturing the same
abstract A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode, a dielectric layer, a layer of solid electrolyte, a second electrode, and a metal layer. The layer of solid electrolyte is on the first electrode. The second electrode is on the layer of solid electrolyte. The metal layer is near the layer of solid electrolyte. The dielectric layer is between the layer of solid electrolyte and the metal material. Due to the metal layer being disposed near the layer of solid electrolyte in the CBRAM device, it can generate a positive electric field during erase so as to accelerate the break of connected metal filaments.
priorityDate 2008-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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