http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201025503-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8f0340ebff412283929c9fce83ade06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 2009-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408c24c1456932e25300a304a43bc2a9 |
| publicationDate | 2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201025503-A |
| titleOfInvention | High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability |
| abstract | The present invention provides a method of forming a contact opening, such as a via hole, wherein a sacrificial layer is deposited prior to exposing a conductor formed in a substrate at the bottom side of the opening to prevent damage and contamination to the materials constituting an integrated circuit device from happening. The exposing may or may not form a recess in the conductor. The present invention also provides a method of forming a contact opening, wherein although a sacrificial layer is deposited after the conductor is exposed, the sacrificial layer protects the dielectric layer when the conductor is exposed again. By forming a trench feature over a contact opening while applying embodiment processes of the present invention, a dual damascene feature can be fabricated. By performing further damascene process steps over various damascene interconnect features formed by using the present invention, various interconnect systems such as a single damascene planar via, a single damascene embedded via, and various dual damascene interconnect systems having either a planar via or an embedded via can be fabricated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9881809-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721887-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I595597-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I556304-B |
| priorityDate | 2008-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 180.