http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201023340-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6677 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2009-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80e7bf29189a56167beaf9ff8bfac472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee9961b51571967dc67c5e29fc67329 |
| publicationDate | 2010-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201023340-A |
| titleOfInvention | Semiconductor device and method for manufacturing the same |
| abstract | An object is to provide a thin and small semiconductor device that has high reliability and high resistance to external stress and electrostatic discharge. Another object is to manufacture a semiconductor device with high yield while shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process. A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown (malfunction of the circuit or damage to a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge. By providing an antenna on the external side of the conductive shield, a sufficient communication capability is secured. With the use of a pair of insulators which sandwich the semiconductor integrated circuit, a thin and small semiconductor device that has resistance properties and high reliability can be provided. Further, shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process, so that a semiconductor device can be manufactured with high yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I763085-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I772241-B |
| priorityDate | 2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 110.