http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201023196-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-5648
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3486
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10
filingDate 2009-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec319be5b3f7782e349dc6546cde5d10
publicationDate 2010-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201023196-A
titleOfInvention Programming non-volatile memory with variable initial programming pulse
abstract Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of the non-volatile storage elements to a set of target conditions using programming pulses. For at least a subset of the programming processes, a programming pulse associated with achieving an intermediate result for a respective programming process is identified, a pulse increment between programming pulses is decreased for the respective programming process while continuing the respective programming process to program non-volatile storage elements to the respective one or more targets and the identified programming pulse is used to adjust a starting programming voltage for a subsequent programming process.
priorityDate 2008-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015
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Total number of triples: 19.