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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f90003a0c70308abc35c243df6b695ab
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publicationDate 2010-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201015687-A
titleOfInvention Multi-chip stacked structure having through silicon via and fabrication method thereof
abstract The invention provides a multi-chip stacked structure having through silicon via and method of fabricating the same, comprising providing a wafer having a plurality first chips each formed with a through silicon via (TSV), the wafer and each first chip having corresponding first and second surfaces; forming a cutting groove on the first surface between each of the first chips; stacking at least one second chip on the first chip and electrically connecting the second chip to the through silicon via of the first chip; forming a molded compound layer on the wafer, each first chip and the first surface for covering the first surface, filling the cutting groove and enclosing the second chip; and thinning the second surface of the wafer to expose the metal pillar formed in the through silicon via therefrom and cutting the wafer to form individual chip structures. The invention does not require carrier boards and adhesive layers in the process of stacking and mounting chips, thereby simplifying the manufacturing process and reducing the cost as a result.
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