http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201015222-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2009-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7504b6464847008bffd1808536c8ecb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a20104ecee0ec4bcd8f7e4cf2aa6743 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2a9aacf507db12b95a8f92ddad3e63f |
| publicationDate | 2010-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201015222-A |
| titleOfInvention | A method for treating a resist layer and a use of positive resist composition |
| abstract | This invention provides a method for processing a resist layer with a multiple patterning method; the method of this invention is capable of accurately and extremely finely forming a pattern obtained with a resist composition for forming a first layer of resist pattern. The method comprises the steps of applying a first resist composition which contains a resin (A) having a construction unit (XX) of formula (1) and a group which is unstable to acid, bing unsoluble or hardly-soluble in an aqueous solution, and soluble after being reacted with acid, and a photo acid generator (B) to a substrate to form a first film, drying a first film, prebaking exposing, post exposure baking, and developing the first film to obtain a first resist pattern, hard baking the first resist pattern, applying a second resist composition to the first resist pattern, drying the second resist composition to obtain a second resist film, prebaking, exposing, post exposure baking and developing the second resist film to obtain a second resist pattern. wherein R1a, R3a, R4a represent H, saturated hydrocarbons, R2a represent single bonds, divalent organic groups etc. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103293858-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I719083-B |
| priorityDate | 2008-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 181.