http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201013840-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate | 2009-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65ba41f70203e20273801dc26d5cf512 |
publicationDate | 2010-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201013840-A |
titleOfInvention | Structure and process for conductive contact integration |
abstract | A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containine liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity. |
priorityDate | 2008-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.