| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-949 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3063 |
| filingDate |
2009-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee565e0921f3f7c3d4efebf21724b53 |
| publicationDate |
2010-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201013773-A |
| titleOfInvention |
Method for photoresist pattern removal |
| abstract |
The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a sulfuric acid (H2SO4) and peroxide (H2O2) solution to remove the patterned photoresist layer; perform a cleaning process to the substrate; and applying a wet etching process to remove the sacrificial layer. |
| priorityDate |
2008-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |