| abstract |
The present invention is to provide a residue peeling liquid composition and cleaning method of semiconductive by using it, which in the manufacturing step of semiconductive substrate having metal wiring consisting of aluminum (Al) or aluminum alloy, it is able to completely remove the residual resist residues and residues derived from titanium (Ti) in short time under lower temperature, and the interlayer insulating material or wiring material and the like will not be corroded after the drying and ashing treatments in order to form the via-hole. The said residue peeling liquid composition comprises (A) fluoride aluminum, (B) methanesulfonic acid, (C) compound having C ≡ C, (D) water-soluble organic solvent, and (E) water. Besides, the contents of each (A), (B), (C), (D) and (E) in the said residue peeling liquid composition are separately 0.005-2 mass%, 0.1-10 mass%, 60-75 mass%, and 5-38 mass%; and the mole ratio of (B) is 0.9-1.5 time relative to (A). |