| abstract |
A fabrication method of a thin film transistor is described. First, a substrate is provided. Thereafter, a first gate is formed on the substrate. Then, an insulator is formed to cover the first gate and portion of the substrate. Moreover, a channel structure is formed on the insulator above the gate. In addition, a metal layer is formed to cover the channel structure and portion of the insulator. Thereafter, the metal layer is patterned and at least the metal layer on the sidewall of the channel structure is retained to form a source/drain. A passivation layer is formed to cover the source, the drain and the portion of the insulator. |