http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201005141-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94d2bdbe7871082cf1202957f44c71c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_67ddb426ec27b4566aa864c9a6ed9d1c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate | 2009-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7ce374f35a82f77d04289e87c134182 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a5571d58889b7225c707014977c614e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb5b7b131f064b565d33271d15419e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07597c3fd67e0e548428044e5370f98a |
| publicationDate | 2010-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201005141-A |
| titleOfInvention | Method for manufacturing nitrogen compound semiconductor substrate, nitrogen compound semiconductor substrate, method for manufacturing single crystal sic substrate, and single crystal sic substrate |
| abstract | Disclosed is a method for manufacturing a nitrogen compound semiconductor substrate whereby it is possible to obtain a highly crystalline nitrogen compound semiconductor layer. The method comprises the steps of preparing an Si substrate (1) comprising a surface Si layer (3), which has a predetermined thickness, and an embedded insulating layer (4), heating the Si substrate (1) in a carbon-based gas atmosphere to convert the surface Si layer (3) to a single crystal SiC layer (6) so that the part of the Si layer located near the interface (8) between the Si layer and the embedded insulating layer (4) is allowed to stay as a residual Si layer (5), and furthermore, epitaxially growing a nitrogen compound semiconductor layer (15) on the surface single crystal SiC. Also disclosed is a method for manufacturing a single crystal SiC substrate whereby it is possible to obtain a highly crystalline SiC layer. The method comprises preparing an Si substrate (1) comprising a surface Si layer (3), which has a predetermined thickness, and an embedded insulating layer (4) and heating the Si substrate (1) in a carbon-based gas atmosphere to convert the surface Si layer (3) to a single crystal SiC layer (6) so that, in converting the surface Si layer (3) to the single crystal SiC layer (6), the part of the Si layer located near the interface (8) between the Si layer and the embedded insulating layer (4) remains as a residual Si layer (5). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I680504-B |
| priorityDate | 2008-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.