http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201003304-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31616 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24 |
| filingDate | 2009-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_768ff6e6a23ad28d42a1436924e346f6 |
| publicationDate | 2010-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201003304-A |
| titleOfInvention | Reflective mask blank for EUV lithography |
| abstract | The present invention provides a reflective mask blank for EUV photolithography, which has a low reflectivity layer. The low reflectivity layer has low reflectivity in the wavelength range of EUV and photomask pattern inspection light. In particular, it has the properties of low reflectivity in the full wavelength range (190- 260 nm) of photomask pattern inspection light and high etching speed during chlorine gas etching process. The substrate of reflection photomask for EUVphotolithography of the present invention is to form on the substrate a reflection layer for reflecting EUV light, an absorption layer for absorbing EUV light, a low reflectivity layer having low reflectivity for photomask pattern inspection light (wavelength 190- 260 nm) by the described sequence. Features of the present invention include are: on said low reflectivity layer, in terms of the total composition ratio, silicon (Si) and nitrogen (N) are above 95 at%; the containing ratio of Si is between 5 - 80 at%; the containing ratio of N is between 15-90 at%. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I501023-B |
| priorityDate | 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.