| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5519d1b1bd4b2a57cccba519c852bfa2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02S50-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02S50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06T2207-30148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2033-0095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06T7-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-6489
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9505 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2009-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d2507dbb61aaf8a25c45e1b29ca00f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58e12e5ce37ed977cfe4e2b80d9f4629 |
| publicationDate |
2010-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201000887-A |
| titleOfInvention |
Wafer imaging and processing method and apparatus |
| abstract |
A method (1) is disclosed whereby luminescence images are captured (2) from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed (3) to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilised (4) to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilised to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103038653-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I600895-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103038653-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I635269-B |
| priorityDate |
2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |