| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ac9ca2e37aefdf342fd34ce0bfbb92b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2009-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a60ec1880e2cd87a4863deadbee70f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55d725344a8498da05173203547bfaed |
| publicationDate |
2009-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200952172-A |
| titleOfInvention |
Polycrystalline silicon layer, thin film transistor comprising the same, and fabricating method of the same |
| abstract |
Provided are a polycrystalline silicon layer in which resistance characteristics are excellent by forming the polycrystalline silicon layer having a Raman peak at 515 to 517 cm-l, which is shifted to the left from the conventional peak at 518 to 520 cm-l, a thin film transistor having the same, and a method of fabricating the thin film transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103323444-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8975126-B2 |
| priorityDate |
2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |