http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200949954-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a013f27aee93b16ee05c95b0d161b734 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52ad1e67acd723faa01f253989afa3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f46dffa6ddcb76e43f8fa439e01c5d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dde5d77f72c0d4f9982e18e35e1d00fa |
publicationDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-200949954-A |
titleOfInvention | Mathod for making thin film transistor |
abstract | The present invention relates to a method for making a thin film transistor. The method includes the steps of: (a) providing a growing substrate; (b) forming a catalyst layer on a surface of the growing substrate; (c) heating the substrate with the catalyst layer in a furnace with a protective gas therein; supplying a carbon source gas and a carrier gas to the furnace, and growing a single walled carbon nanotube layer on the surface of the substrate, the volume ratio of the carrier gas to the carbon source gas is in the range from 100: 1 to 100: 10; (d) forming a source electrode and a drain electrode separated from the source electrode, and electrically connecting the carbon nanotube layer to the source electrode and the drain electrode respectively; (e) forming a insulating layer on the carbon nanotube layer; and (f) forming a gate electrode on the insulating layer to achieve a thin film transistor. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I487033-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8864927-B2 |
priorityDate | 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.