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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52ad1e67acd723faa01f253989afa3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f46dffa6ddcb76e43f8fa439e01c5d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dde5d77f72c0d4f9982e18e35e1d00fa
publicationDate 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200949954-A
titleOfInvention Mathod for making thin film transistor
abstract The present invention relates to a method for making a thin film transistor. The method includes the steps of: (a) providing a growing substrate; (b) forming a catalyst layer on a surface of the growing substrate; (c) heating the substrate with the catalyst layer in a furnace with a protective gas therein; supplying a carbon source gas and a carrier gas to the furnace, and growing a single walled carbon nanotube layer on the surface of the substrate, the volume ratio of the carrier gas to the carbon source gas is in the range from 100: 1 to 100: 10; (d) forming a source electrode and a drain electrode separated from the source electrode, and electrically connecting the carbon nanotube layer to the source electrode and the drain electrode respectively; (e) forming a insulating layer on the carbon nanotube layer; and (f) forming a gate electrode on the insulating layer to achieve a thin film transistor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I487033-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8864927-B2
priorityDate 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.