http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200949952-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e0ad31794c673a87de6f00a642d2f5a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate | 2009-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aca79a90b2f55c7e0bb27df3382bd9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b3dddc9fff48158078782770650ee91 |
| publicationDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200949952-A |
| titleOfInvention | Methods of counter-doping collector regions in bipolar transistors |
| abstract | The present invention provides a method of forming a bipolar transistor. The method includes doping a silicon layer with a first type of dopant and performing a firs implant process to implant dopant of a second type opposite the first type in the silicon layer. The implanted dopant has a first dopant profile in the silicon layer. The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer. The additional implanted dopant has a second dopant profile in the silicon layer different than the first dopant profile. The method further includes growing an insulating layer formed over the silicon layer by consuming a portion of the silicon layer and the first type of dopant. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I463540-B |
| priorityDate | 2008-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.