| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2009-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da791bcad4061a7f67f9f2a8bdd08522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bfdce8ecaad9d5c9457ee9bb9a22f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92aca6788fe723ec21c500d54aa7aadf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4d8d0b7281897b52e7b29e924d76b1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d2c0a1eaeb6deb2c3e3bf6c78751812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df874194d9a583c0f3b5db1f7d9f002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_610df2447f9c02ca8b1b5c8a13a7bcf6 |
| publicationDate |
2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200949912-A |
| titleOfInvention |
Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
| abstract |
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction. |
| priorityDate |
2008-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |