http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200949431-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08 |
| filingDate | 2009-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_849a97649244b84fd4cd0e94270460db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d104fd2245bdf5654068f4517465a2f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9ec45d973f08c63f3563cd36b0da7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f7279171ad82bd5bd536eec5c5f9ce |
| publicationDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200949431-A |
| titleOfInvention | Photo mask blank, photo mask and manufacturing method for photo mask blank |
| abstract | A photo mask blank characterize in that is for manufacturing photo mask suitable for ArF excimer laser; which has a light shielding film on a light-transmissive substrate; the said light shielding film has a laminated structure laminating an anti-inner side reflection layer, a light shielding layer and a anti-surface reflection layer in this order; a total film thickness of the light shielding film is 60 nm or less; the anti-inner side reflection layer is consisted of metal and has a first etching speed; the anti-surface reflection layer is consisted of metal and has a third etching speed; the light shielding layer is consisted of metal same as contained in the anti-inner side reflection layer or the anti-surface reflection layer, and it has a second etching speed lower than the first etching speed or the second etching speed; a film thickness of the light shielding layer is 30% or less of the total film thickness of the light shielding film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I733033-B |
| priorityDate | 2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.