| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-932
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-939
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-891
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-89 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate |
2009-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fac43b79a63f67941df333ccc6775c4d |
| publicationDate |
2009-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200947715-A |
| titleOfInvention |
High aspect ratio openings |
| abstract |
A capacitor forming method includes forming an electrically conductive support material over a substrate, with the support material containing at least 25 at% carbon. The method includes forming an opening through at least the support material where the opening has an aspect ratio of at least 20: 1 within a thickness of the support material. After forming the opening, the method includes processing the support material to effect a reduction in conductivity, and forming a capacitor structure in the opening. |
| priorityDate |
2005-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |