| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1784eb7fc902d292db30e120ec712d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2009-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10602092917134b8cf2c8c68727a6740
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c8f5a34b7a72f7fcb62935054f1b3e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34d3123f672354b4dfde4f5b588c1561 |
| publicationDate |
2009-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200943425-A |
| titleOfInvention |
ULSI microwiring member having ruthenium-plating layer on barrier layer |
| abstract |
The object of the present invention is to provide an ULSI microwiring member having a seed layer of which especially the coverage of inside wall of a via or trench is sufficient, the film thickness is as uniform even as surface portion and the impurity concentration is small. The other object of the present invention is to provide an ULSI microwiring member of which the ULSI microwiring is formed without generation of void because a seed layer is applied prior to copper plating, an forming method, and a semiconductor wafer formed with the ULSI microwiring. The ULSI microwiring member has a substrate and a ULSI microwiring formed on the substrate. The ULSI microwiring has a barrier layer formed on the substrate and a ruthenium-plating layer formed on the barrier layer. The ruthenium layer is used as a seed layer so as to form copper plating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I718227-B |
| priorityDate |
2008-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |