http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200939478-A

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filingDate 2008-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc2846bedb8a402095edb3cc25192526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95034377748e7ba3560ce26626139956
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publicationDate 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200939478-A
titleOfInvention Pixel structure and fabricating methods thereof
abstract A pixel structure including a substrate, a scan line, a gate, a gate insulation layer, a patterned semiconductor layer, a source, a drain, a data line, a passivation layer, a pixel electrode and a first connecting wire is provided. The scan line and the gate are disposed on the substrate. Additionally, the substrate, the scan line and the gate is covered by the gate insulation layer. Moreover, the patterned semiconductor layer is disposed on the gate insulation layer above the gate. The source and the drain are disposed on the patterned semiconductor layer respectively. Particularly, the passivation layer has a plurality of second contact windows exposing the data line. The pixel electrode is disposed on the passivation layer and electrically connected to the drain through a first contact window. Moreover, the first connecting wire is disposed on the passivation layer above the data line, and electrically connected to the data line through the second contact windows.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I463226-B
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