http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200939455-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-901 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
filingDate | 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efabe40cab67fe6d83fcca0dfd8ae763 |
publicationDate | 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-200939455-A |
titleOfInvention | Semiconductor device and its fabrication method |
abstract | A semiconductor device includes a first MIS transistor, and a second MIS transistor having a threshold voltage higher than that of the first MIS transistor. The first MIS transistor includes a first gate insulating film made of a high-k insulating film formed on a first channel region, and a first gate electrode having a first conductive portion provided on and contacting the first gate insulating film and a second conductive portion. The second MIS transistor includes a second gate insulating film made of the high-k insulating film formed on a second channel region, and a second gate electrode having a third conductive portion provided on and contacting the second gate insulating film and a fourth conductive portion. The third conductive portion has a film thickness smaller than that of the first conductive portion, and is made of the same composition material as that of the first conductive portion. |
priorityDate | 2008-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.