http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200939455-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
filingDate 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efabe40cab67fe6d83fcca0dfd8ae763
publicationDate 2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200939455-A
titleOfInvention Semiconductor device and its fabrication method
abstract A semiconductor device includes a first MIS transistor, and a second MIS transistor having a threshold voltage higher than that of the first MIS transistor. The first MIS transistor includes a first gate insulating film made of a high-k insulating film formed on a first channel region, and a first gate electrode having a first conductive portion provided on and contacting the first gate insulating film and a second conductive portion. The second MIS transistor includes a second gate insulating film made of the high-k insulating film formed on a second channel region, and a second gate electrode having a third conductive portion provided on and contacting the second gate insulating film and a fourth conductive portion. The third conductive portion has a film thickness smaller than that of the first conductive portion, and is made of the same composition material as that of the first conductive portion.
priorityDate 2008-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520403
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6857428
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419558793
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23956
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559362
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416641266
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414004986
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23932
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559477
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID62780
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523132
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419405613
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23950
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82832
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID154202123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326954
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23963
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415731115
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578722
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579044
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID432176025
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID93091
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 41.