abstract |
The present invention provides an insulating film material for plasma CVD represented by the chemical formula (1), a method of film formation using the insulating film material, and the insulating film. According to the present invention, an insulating film having a dielectric constant and high copper diffusion barrier property suitable for an interlayer insulating film and the like of semiconductor devices can be obtained. [Chemical 1] In the chemical formula (1), n is an integer of 3 to 6; R1 and R2 are independently one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9, and C5H11. |