| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2009-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_055e4330ba2ba0622e4fb56694ff1d99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b43dbc0cd34761438170ebcdec950c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33fdec7179aafbe34c4c344a136eb129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc817549f87b3e10c3b44b20d817d7d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97f96e9cefce24dc7577592d1c670f74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3914cbbdcd688e4f29f530308b29f296 |
| publicationDate |
2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200936800-A |
| titleOfInvention |
Film forming method |
| abstract |
Disclosed is a film forming method wherein the surface coverage of a gate insulating film is enhanced while reducing deterioration in the electrical characteristics thereof. The film forming method comprises a step of supplying mixture gas containing an organic silane compound and oxidizing gas into a vacuum chamber (11), a step of generating high frequency pulsating power in order to supply high frequency power intermittently, and a step of forming a silicon insulating film on a substrate (S) by generating a plasma of the mixture gas using the high frequency pulsating power. The high frequency pulsating power is generated with a maximum duty ratio out of duty ratios which satisfy a target value of the surface coverage of the silicon insulating film. |
| priorityDate |
2008-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |