http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200936798-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23d994b3d26382b3031313e93e543007 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0812 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0652 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0635 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate | 2008-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0f1e3d2cd34540d7c4b05a73eb37b5c |
| publicationDate | 2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200936798-A |
| titleOfInvention | Method for depositing films using gas cluster ion beam processing |
| abstract | A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises providing to the reduced-pressure environment a gas cluster ion beam (GCIB) from a pressurized gas mixture, accelerating the GCIB, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film. In one embodiment, the pressurized gas mixture comprises a silicon-containing specie and at least one of a nitrogen-containing specie or a carbon-containing specie for forming a thin film containing silicon and at least one of nitrogen or carbon. In another embodiment, the gas mixture comprises a metal-containing specie for forming a thin metal-containing film. In yet another embodiment, the pressurized gas mixture comprises a fluorocarbon-containing specie for forming a thin fluorocarbon-containing film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112176304-A |
| priorityDate | 2007-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 108.