http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200932683-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5a7c8179580a8082f8d9447ca5230ca5 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-388 |
filingDate | 2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef4ff0f60ff6dad79f87c1c5af6f8448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f01b1d9ccf5f01c082bfe77514e03357 |
publicationDate | 2009-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-200932683-A |
titleOfInvention | Method for preparing conductive and transparent ZnO thin films using chelate doping |
abstract | A use chelate doping method for preparing conductive and transparent ZnO thin films was developed. In this approach, a zinc metal salt is used as the metal source, and a polymer or copolymer containing the hydrophilic groups is used as the functional groups for chelate doping reaction. The zinc metal salt and the polymer or copolymer are first mixed in an alcohol or water solvent to form the zinc precursor sol, and the zinc precursor sol then was spin-coated and dried to form zinc precursor thin films. Then the dried precursor thin film was soaked in a suitable concentration of dopant solution for a suitable time to perform the doping reaction. Finally, the doped precursor film was annealed in a furnace in air to crystallize and form a doped zinc oxide thin film. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8927986-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113292095-A |
priorityDate | 2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.