http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200932661-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0136 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00103 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2008-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3da8bc0bb99ce4d666fc31f1762c996 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8df6caf3043d2c1e4d8720b0f332744c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d39e78ab43a8928b123460941902fde6 |
| publicationDate | 2009-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200932661-A |
| titleOfInvention | Method for producing micromechanical structures having a protruding lateral wall progression or an adjustable angle of inclination |
| abstract | The invention relates to a method for producing micromechanical structures having a raised lateral wall progression or an adjustable angle of inclination. The micromechanical structures are etched out of an SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50) provided on, or deposited on, a silicon semiconductor layer (1, 10), by dry-chemical etching of the SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50). The lateral wall progression of the micromechanical structure is formed by varying the germanium part in the SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50) to be etched. There is a higher germanium part in regions that are to etched more aggressively. The variation of the germanium part in the SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50) is adjusted by a method selected from a group wherein an SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50) having a varying germanium content is deposited, wherein germanium is introduced into a silicon semiconductor layer or an SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50), wherein silicon is introduced into a germanium layer or an SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50), and/or wherein a SiGe-mixed semiconductor layer (3a, 3b, 30, 30a, 30b, 50) is subjected to thermal oxidation. |
| priorityDate | 2007-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.